• Staff Device Design & Integration Engineer

    Renesas (Goleta, CA)
    …: 5+ years of experience with a MS, and 3+ years of experience with Ph.D in GaN Device and GaN Device Physics. + Strong familiarity with GaN ... GaN products. Will be responsible for the choice of GaN epitaxial structures, the device dimensions, the chip layout and package considerations to meet cost,… more
    Renesas (12/20/25)
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  • Senior Device Design & Integration Engineer

    Renesas (Goleta, CA)
    …test campaigns, physics based models of reliability and lifetime. **Responsibilities** + High-voltage GaN device design for cost, performance, and reliability + ... in Electrical Engineering or related fields + Strong familiarity with GaN device physics, layout and characterization + Proficient in data manipulation and… more
    Renesas (12/20/25)
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  • Senior Staff MOCVD Development Engineer

    Renesas (Goleta, CA)
    …behavior, GaN heterostructure engineering, and epitaxial integration for p- GaN and e-mode (enhancement-mode) device architectures. The ideal candidate ... transfer MOCVD epitaxial processes for GaN -on-Si and GaN -onSapphire wafers, focusing on high-performance device layers...-on-Si and GaN -onSapphire wafers, focusing on high-performance device layers targeting e-mode (p- GaN gate) and… more
    Renesas (12/17/25)
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  • Senior Power Electronic Test Engineer

    Renesas (Goleta, CA)
    …+ **Power Converter Topology Analysis and Test System Development** + Analyze GaN device behavior within common power converter circuits. + Translate ... Job Description The Senior Power Electronics Test Engineer helps develop and validate GaN power devices by designing SALT/HTOL test circuits and systems, evaluating … more
    Renesas (12/11/25)
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  • Process engineer IV - MicroLEDs

    Applied Materials (Santa Clara, CA)
    …VCSEL arrays, etc.) for photonic interconnect applications. + Perform device design and modeling (optical/electrical/thermal) using simulation tools such as ... Physics, or related field. + Strong knowledge of optoelectronic device physics and design. + 5+ years of experience...+ 5+ years of experience in compound semiconductor processing ( GaN , GaAs, InP) with emphasis on microLED or VCSEL… more
    Applied Materials (01/10/26)
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  • Principal/Senior Principal Engineer RF Microwave…

    Northrop Grumman (Manhattan Beach, CA)
    …work with teammates to accomplish common goals. Design technologies will include GaAs, GaN , and InP. This position will require an individual who is comfortable with ... multiple roles and responsibilities is required, supporting RF design, device modelling, mechanical design, design for manufacturability, and business development.… more
    Northrop Grumman (01/08/26)
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  • Senior RF Engineer

    Advanced Energy (Milpitas, CA)
    …RF layout, filter design, and impedance Matching. + Power electronics design and power device selection: Si MOSFETs, SiC MOSFETS, GaN , LDMOS. + Testing and debug ... using common lab equipment such as oscilloscopes, power supplies, DMMs, function generators, JTAG or similar tools, etc. + Schematic capture and PCBA layout (experience with Altium(R) Designer a plus). + Control loop design and theory. + Basic programming or… more
    Advanced Energy (11/06/25)
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