• Technology Development Intern, RF GaN

    Global Foundries (Essex Junction, VT)
    …wide band gap materials like the III-N material system + Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and ... Including associated electrical test and analysis methods of discrete device structures. + Research experience in GaN ...discrete device structures. + Research experience in GaN e-mode or d-mode HEMT RF High Frequency or… more
    Global Foundries (09/19/25)
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  • Technology Development Integration Engineer, RF…

    Global Foundries (Essex Junction, VT)
    …MS + 1-3 year of experience PhD + 0-1 year of experience + Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, ... are seeking highly motivated employees with interest in semiconductor process and device development to work with our Technology Development team in advancing world… more
    Global Foundries (07/23/25)
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  • Technology Development Device Leader

    Global Foundries (Essex Junction, VT)
    …Research and Development Organization is seeking qualified candidates for the role of Power GaN Technology Development Device Leader. The Device Leader is ... expected to bring deep theoretical knowledge and extensive experience in device physics to bear on the challenge of providing customers with competitive device more
    Global Foundries (10/07/25)
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  • Fab 9 Technology Development GaN Epitaxial…

    Global Foundries (Essex Junction, VT)
    …engineer you will be responsible to design and develop discrete semiconductor GaN Epitaxy processes that that meet the performance, reliability, yield, and cost ... silicon germanium (SiGe), and wide band gap semiconductors (eg GaN , SiC, etc). + Define and optimize III-V superlattices,...etc). + Define and optimize III-V superlattices, buffers, and device layers and requirements as defined in the Technology… more
    Global Foundries (07/23/25)
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  • Technology Development Engineering Intern,…

    Global Foundries (Essex Junction, VT)
    …with the technology development integration and process teams as well as test and device engineers in driving the integration of advanced process modules to be used ... 90nm, and sub 90nm nodes in CMOS, SiGe, and GaN technologies targeting new and improved RF applications. +...science discipline. + A basic knowledge of modern semiconductor device physics and device characterization. + A… more
    Global Foundries (10/09/25)
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