- Texas Instruments (Dallas, TX)
- **The Opportunity:** TI is seeking an innovative and highly skilled GaN Technology Development Leader to join our cutting-edge Gallium Nitride ( GaN ) Technology ... will be instrumental in shaping the direction, developing and scaling GaN power process technologies for high-volume manufacturing. You'll collaborate across… more
- Texas Instruments (Dallas, TX)
- …your job.** **The Opportunity:** TI is seeking an innovative and highly skilled GaN Device Project Lead Engineer to join our cutting-edge Gallium Nitride ( GaN ... reliable systems. You will be instrumental in developing and scaling GaN power process technologies for high-volume manufacturing. You'll collaborate across… more
- Global Foundries (Essex Junction, VT)
- …device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications. Essential Responsibilities Include + Innovate ... objectives for electrical performance, reliability, and yield. Focus on GaN HEMT development for RF applications + Collaborate with...team to organize, run, and analyze experiments for the GaN technology as it is being developed to meet… more
- GE Aerospace (Pompano Beach, FL)
- …we invite you to explore the exciting opportunities we have to offer. A GaN (Gallium Nitride) and SiC (Silicon Carbide) Power Module Packaging Engineer focuses on ... with development, optimization, and implementation of manufacturing processes for both GaN and SiC power modules. These advanced semiconductor power modules are… more
- Global Foundries (Essex Junction, VT)
- …device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications. Essential Responsibilities: + This position ... offers the unique opportunity to develop innovative RF GaN t echnologies as a Process Integration Engineer and...PhD + 0-1 year of experience + Knowledge of GaN HEMT and modern semiconductor device physics and device… more
- Global Foundries (Essex Junction, VT)
- …engineer you will be responsible to design and develop discrete semiconductor GaN Epitaxy processes that that meet the performance, reliability, yield, and cost ... silicon-on-insulator (SOI), silicon germanium (SiGe), and wide band gap semiconductors (eg GaN , SiC, etc). + Define and optimize III-V superlattices, buffers, and… more
- KBR (Dayton, OH)
- …at Wright Patterson AFB, OH. The candidate will focus on epitaxial growth of GaN , AlGaN/ GaN and Ga2O3 structures for high power and radio frequency transistors ... and solutions to problems. Key Responsibilities: + Epitaxial growth: Grow GaN , AlGaN/ GaN and Ga2O3 structures for high power and radio frequency transistors… more
- Texas Instruments (Santa Clara, CA)
- …have the ability to define solutions across various HV technologies like GaN , SiC, IGBT and Isolation Technologies and validate these using CFD, thermomechanical ... and high power (5KW - 300KW) semiconductor packaging across GaN / SIC / IGBT, Super Junction MOSFET technologies...and case modules) + Strong knowledge of Silicon / GaN / SiC-package interaction and hands on experience with… more
- Mercury Systems (Peachtree Corners, GA)
- …The ideal candidate has significant design experience with both GaAs and GaN processes, and has successfully taken designs from prototype through production. ... Responsibilities: + Design RF monolithic microwave integrated circuit components on GaAs and GaN processesUses RF simulation tools (such as AWR) to model and layout… more
- Mercury Systems (Peachtree Corners, GA)
- …band. The ideal engineer has significant design experience with both GaAs and GaN processes and has successfully taken designs from prototype through production. Job ... Responsibilities + Design RF monolithic microwave integrated circuit components on GaAs and GaN processes + Uses RF simulation tools (such as AWR) to model,… more
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