- Texas Instruments (Dallas, TX)
- …including Doherty, LMBA, out-phasing and pulsed amplifier designs + Familiar with RF GaN device physics, including trapping and thermals, and transistor models + ... your talent to work with us. The Senior RF GaN Power Amplifier Design Engineer role is within Kilby...in designing different Power Amplifier classes and configurations + Device small signal model extractions and waveform engineering for… more
- Global Foundries (Essex Junction, VT)
- …wide band gap materials like the III-N material system + Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and ... Including associated electrical test and analysis methods of discrete device structures. + Research experience in GaN ...discrete device structures. + Research experience in GaN e-mode or d-mode HEMT RF High Frequency or… more
- Renesas (Goleta, CA)
- …: 5+ years of experience with a MS, and 3+ years of experience with Ph.D in GaN Device and GaN Device Physics. + Strong familiarity with GaN ... GaN products. Will be responsible for the choice of GaN epitaxial structures, the device dimensions, the chip layout and package considerations to meet cost,… more
- Renesas (Goleta, CA)
- …test campaigns, physics based models of reliability and lifetime. **Responsibilities** + High-voltage GaN device design for cost, performance, and reliability + ... in Electrical Engineering or related fields + Strong familiarity with GaN device physics, layout and characterization + Proficient in data manipulation and… more
- Texas Instruments (Dallas, TX)
- … physics, and reliability. The scope of the job includes, but not limited to: + GaN device simulations (TCAD), device design, layout, lead tape-outs + Novel ... Engineering, Physics, or related degree + 10+ years of hands-on experience in GaN or compound semiconductor device /process development (can include postdoc or… more
- Renesas (Goleta, CA)
- …behavior, GaN heterostructure engineering, and epitaxial integration for p- GaN and e-mode (enhancement-mode) device architectures. The ideal candidate ... transfer MOCVD epitaxial processes for GaN -on-Si and GaN -onSapphire wafers, focusing on high-performance device layers...-on-Si and GaN -onSapphire wafers, focusing on high-performance device layers targeting e-mode (p- GaN gate) and… more
- Global Foundries (Essex Junction, VT)
- …Research and Development Organization is seeking qualified candidates for the role of Power GaN Technology Development Device Leader. The Device Leader is ... expected to bring deep theoretical knowledge and extensive experience in device physics to bear on the challenge of providing customers with competitive device … more
- Renesas (Goleta, CA)
- …+ **Power Converter Topology Analysis and Test System Development** + Analyze GaN device behavior within common power converter circuits. + Translate ... Job Description The Senior Power Electronics Test Engineer helps develop and validate GaN power devices by designing SALT/HTOL test circuits and systems, evaluating … more
- BAE Systems (Nashua, NH)
- …of work experience; or PhD in semiconductor related fields + Working knowledge of GaN -based RF device highly desired + Experience in technical proposal writing + ... processes and optimize these processes for manufacturability. This includes advanced device and process development, new process integration, as well as… more
- Global Foundries (Essex Junction, VT)
- …engineer you will be responsible to design and develop discrete semiconductor GaN Epitaxy processes that that meet the performance, reliability, yield, and cost ... silicon germanium (SiGe), and wide band gap semiconductors (eg GaN , SiC, etc). + Define and optimize III-V superlattices,...etc). + Define and optimize III-V superlattices, buffers, and device layers and requirements as defined in the Technology… more