- Texas Instruments (Dallas, TX)
- …Love your job.** **The Opportunity:** TI is seeking an innovative and highly skilled GaN Device Project Lead Engineer to join our cutting-edge Gallium Nitride ( ... and reliability. The scope of the job includes, but not limited to: + GaN device simulations (TCAD), device design, layout + Develop robust process flows,… more
- Global Foundries (Essex Junction, VT)
- …wide band gap materials like the III-N material system + Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and ... Including associated electrical test and analysis methods of discrete device structures. + Research experience in GaN ...discrete device structures. + Research experience in GaN e-mode or d-mode HEMT RF High Frequency or… more
- Texas Instruments (Dallas, TX)
- …Applied Physics, or a related field + 5+ years of hands-on experience in GaN or compound semiconductor device /process development + 2+ years in a technology ... Physics, or a related field + 5+ years of experience in GaN -based electronic device development, preferably in a leadership role + Familiarity with GaN… more
- Global Foundries (Essex Junction, VT)
- …MS + 1-3 year of experience PhD + 0-1 year of experience + Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, ... are seeking highly motivated employees with interest in semiconductor process and device development to work with our Technology Development team in advancing world… more
- Power Integrations (San Jose, CA)
- …switch mode power supply using WBG power devices + Hands-on experience with GaN power device characterization, including Dynamic Rdson would be desirable + ... Responsibilities + Design new test boards to characterize switching performance of GaN and other WBG power semiconductor devices + Hands-on static and dynamic… more
- Global Foundries (Essex Junction, VT)
- …Research and Development Organization is seeking qualified candidates for the role of Power GaN Technology Development Device Leader. The Device Leader is ... expected to bring deep theoretical knowledge and extensive experience in device physics to bear on the challenge of providing customers with competitive device … more
- BAE Systems (Nashua, NH)
- …of work experience; or PhD in semiconductor related fields + Working knowledge of GaN -based RF device highly desired + Experience in technical proposal writing + ... processes and optimize these processes for manufacturability. This includes advanced device and process development, new process integration, as well as… more
- Global Foundries (Essex Junction, VT)
- …engineer you will be responsible to design and develop discrete semiconductor GaN Epitaxy processes that that meet the performance, reliability, yield, and cost ... silicon germanium (SiGe), and wide band gap semiconductors (eg GaN , SiC, etc). + Define and optimize III-V superlattices,...etc). + Define and optimize III-V superlattices, buffers, and device layers and requirements as defined in the Technology… more
- Broadcom (San Jose, CA)
- …for cellular front-end module development. Part of a global team that develops RF semiconductor device (GaAs HBT, RF SOI, RF CMOS, GaN HEMT) and MMIC (power ... successful candidate will have wide-ranging hands-on experience in RF semiconductor device fabrication and operation, IC foundry process control, MMIC process… more
- Power Device Corp (Bohemia, NY)
- …Electronics Department:NY Engineering Location:Bohemia, NY For more than 50 years, Power Device Corporation (PDC) has been recognized as a world leader in the ... from requirements, architecture, and detailed design, through to design validation, device verification, qualification, including support for the handoffs to test… more
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