- Texas Instruments (Dallas, TX)
- …world. Love your job.** **The Opportunity:** TI is seeking an innovative and highly skilled GaN Device Project Lead Engineer to join our cutting-edge Gallium ... of the job includes, but not limited to: + GaN device simulations (TCAD), device ...position requires interfacing with multiple teams. **Why TI?** + Engineer your future. We empower our employees to truly… more
- Global Foundries (Essex Junction, VT)
- …Responsibilities: + This position offers the unique opportunity to develop innovative RF GaN t echnologies as a Process Integration Engineer and deliver ... experience PhD + 0-1 year of experience + Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, s-parameter, load… more
- Texas Instruments (Dallas, TX)
- …Applied Physics, or a related field + 5+ years of hands-on experience in GaN or compound semiconductor device /process development + 2+ years in a technology ... position requires interfacing with multiple teams. **Why TI?** + Engineer your future. We empower our employees to truly...a related field + 5+ years of experience in GaN -based electronic device development, preferably in a… more
- Global Foundries (Essex Junction, VT)
- …GLOBAL FOUNDRIES is seeking highly skilled and motivated semiconductor process development engineer to join our Fab9 Technology Development team to develop and ... fabricator in Essex Junction, Vermont (Fab9). As a Lead Epitaxy development engineer you will be responsible to design and develop discrete semiconductor … more
- Power Integrations (San Jose, CA)
- …switch mode power supply using WBG power devices + Hands-on experience with GaN power device characterization, including Dynamic Rdson would be desirable + ... Responsibilities + Design new test boards to characterize switching performance of GaN and other WBG power semiconductor devices + Hands-on static and dynamic… more
- Global Foundries (Essex Junction, VT)
- …visit www.gf.com. Summary of Role: This position is for an experienced RF Device Compact Modeling Engineer . The candidate will be responsible for transistor ... models in RF CMOS, SOI and WBG GaN technology nodes supporting RF Product Line Roadmap. Specific...will include modeling interface role to Fab and technology device teams, compact model correlation to hardware, targeting, benchmarking,… more
- BAE Systems (Nashua, NH)
- …of work experience; or PhD in semiconductor related fields + Working knowledge of GaN -based RF device highly desired + Experience in technical proposal writing + ... career with BAE Systems. BAE Systems is seeking a Senior Principal Semiconductor Engineer to join the Advanced Microwave Product Center (located in Nashua, NH). In… more
- Broadcom (San Jose, CA)
- …for cellular front-end module development. Part of a global team that develops RF semiconductor device (GaAs HBT, RF SOI, RF CMOS, GaN HEMT) and MMIC (power ... successful candidate will have wide-ranging hands-on experience in RF semiconductor device fabrication and operation, IC foundry process control, MMIC process… more
- Power Device Corp (Bohemia, NY)
- Principal Electrical Engineer - Analog/Digital/Power Electronics Department:NY Engineering Location:Bohemia, NY For more than 50 years, Power Device Corporation ... Position Summary: PDC is seeking aPrincipal Analog / Mixed Signal Design Engineer experienced in developing devices with active and passive signal conditioning &… more
- RTX Corporation (Andover, MA)
- …applications. Your subject matter technical expertise in reliability testing and characterization, device physics, and applied statistics is key to the success on ... this role. As a lead engineer , you will need to communicate efficiently and effectively...with minimum 5 years of prior work experience with device -level reliability testing and characterization in compound semiconductor field,… more