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The Opportunity:

TI is seeking an innovative and highly skilled GaN Technology Development Leader to join our cutting-edge Gallium Nitride (GaN) Technology Development Team. This role offers the unique opportunity to define and work at the forefront of developing Gallium Nitride technology that is redefining the power electronics landscape — enabling higher efficiency, faster switching, and smaller, more reliable systems. You will be instrumental in shaping the direction, developing and scaling GaN power process technologies for high-volume manufacturing. You’ll collaborate across disciplines to deliver state-of-the-art devices with world-class performance and reliability.

About the job

The candidate for position is responsible for leading and defining the next generation of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:

+ Defining and developing leadership power GaN technology in collaboration with the product and business groups

+ Lead teams to define and develop leadership performance power GaN HEMT technology, work with the Fabs to develop robust process technologies, and solve complex integration challenges

+ Collaboration with fab/manufacturing engineers to ensure device manufacturability

+ Collaboration with the product teams and business groups

+ Drive failure root-cause investigation for device/process/reliability/yield improvement

The ideal candidate is expected to have a strong understanding of the following:

+ Multiple years of experience in Power GaN technology leadership role

+ Power FETs and other relevant semiconductor device physics

+ High electron mobility transistor (HEMT) process flows and the underlying process physics

+ Electrical and materials characterization methodologies and statistical data analysis

Strong hands-on lab experience and excellent problem solving skills are also needed. Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams.

Why TI?

+ Engineer your future. We empower our employees to truly own their career and development. Come collaborate with some of the smartest people in the world to shape the future of electronics.

+ We're different by design. Diverse backgrounds and perspectives are what push innovation forward and what make TI stronger. We value each and every voice, and look forward to hearing yours. Meet the people of TI (https://edbz.fa.us2.oraclecloud.com/hcmUI/CandidateExperience/en/sites/CX/pages/4012)

+ Benefits that benefit you. We offer competitive pay and benefits designed to help you and your family live your best life. Your well-being is important to us.

About Texas Instruments

Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as each generation of innovation builds upon the last to make our technology more reliable, more affordable and lower power, making it possible for semiconductors to go into electronics everywhere. Learn more at TI.com .

Texas Instruments is an equal opportunity employer and supports a diverse, inclusive work environment. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, disability, genetic information, national origin, gender, gender identity and expression, age, sexual orientation, marital status, veteran status, or any other characteristic protected by federal, state, or local laws.

If you are interested in this position, please apply to this requisition.

Minimum Requirements:

+ Master's degree in Electrical Engineering, Materials Science, Applied Physics, or a related field

+ 5+ years of hands-on experience in GaN or compound semiconductor device/process development

+ 2+ years in a technology definition/leadership role

+ Experience with process integration, DOE planning, electrical characterization, and failure analysis

Preferred Qualifications:

+ PhD in Electrical Engineering, Materials Science, Applied Physics, or a related field

+ 5+ years of experience in GaN-based electronic device development, preferably in a leadership role

+ Familiarity with GaN-on-Si technology for power switching applications

+ Proven ability to work across teams and drive results in a fast-paced R&D environment

+ Strong knowledge of semiconductor processing, especially in III-V materials

+ Experience with fab tools and process modules/Integration

+ Strong communication and data analysis skills

+ Knowledge of device physics, reliability mechanisms, and packaging interaction is a plus

+ Ability to lead and work in teams and collaborate effectively with people in different functions

+ Ability to take the initiative and drive for results

**ECL/GTC Required:** Yes