• Technologist for Power Devices

    Insight Global (Essex Junction, VT)


    Job Description

    About the Company

    A leading global semiconductor foundry providing design, development, and fabrication services to technology innovators worldwide. With manufacturing facilities across three continents, the company enables cutting-edge technologies that power industries such as automotive, IoT, and mobile devices.

     

    Role Overview

     

    We are seeking a highly experienced Technologist specializing in High Power / High Voltage Devices to join our R&D team. This role focuses on the development and productization of advanced thyristor and high-voltage power device technologies. The position is based at our 200mm Fab 9 facility in Burlington, VT.

     

    You will serve as a technical leader, driving process and device innovation, engaging directly with customers on development projects, and working closely with fab engineers to ensure successful technology transfer.

    Key Responsibilities

    Lead the development, optimization, and qualification of high-voltage power devices (SCRs, Thyristors, IGBTs).

     

    Collaborate with TCAD teams to optimize device design and process flows.

     

    Partner with fab engineers, suppliers, and customers to align on technology requirements.

     

    Provide technical leadership and oversee project scope, execution, and timelines.

     

    Direct customer engagement for development programs, ensuring alignment and satisfaction.

     

    Drive innovation in substrates, materials, process integration, and tooling for power device technology.

     

    Maintain adherence to all safety, environmental, and security requirements.

     

    We are a company committed to creating inclusive environments where people can bring their full, authentic selves to work every day. We are an equal opportunity employer that believes everyone matters. Qualified candidates will receive consideration for employment opportunities without regard to race, religion, sex, age, marital status, national origin, sexual orientation, citizenship status, disability, or any other status or characteristic protected by applicable laws, regulations, and ordinances. If you need assistance and/or a reasonable accommodation due to a disability during the application or recruiting process, please send a request to Human Resources Request Form (https://airtable.com/app21VjYyxLDIX0ez/shrOg4IQS1J6dRiMo) . The EEOC "Know Your Rights" Poster is available here (https://www.eeoc.gov/sites/default/files/2023-06/22-088\_EEOC\_KnowYourRights6.12ScreenRdr.pdf) .

     

    To learn more about how we collect, keep, and process your private information, please review Insight Global's Workforce Privacy Policy: https://insightglobal.com/workforce-privacy-policy/ .

     

    Skills and Requirements

     

    10+ years of industry experience developing thyristor power devices or other high-voltage discrete power technologies.

     

    8+ years of experience with SCRs (non-negotiable)

     

    Deep knowledge of semiconductor technology, process integration, and device physics.

     

    Proven track record in power device development from concept through productization.

     

    Strong communication skills for customer and cross-functional engagements.

     

    Ability to lead technical teams and manage complex development projects.

     

    Bachelors degree required; Masters or PhD in Electrical Engineering, Solid State Physics, or a related field preferred. 15+ years of R&D experience in power semiconductor technologies.

     

    Experience in discrete power device simulation, characterization, and qualification.

     

    Hands-on expertise with SCRs, IGBTs, and high-voltage device testing.

     

    Prior leadership in technology development projects.

     

    Familiarity with 200mm fab processes and tools.

     

    Willingness to travel up to 50% for project engagements.