• Technology Development Intern, RF GaN…

    Global Foundries (Essex Junction, VT)
    …methods of discrete device structures. + Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device ... is a leading full-service semiconductor foundry providing a unique combination of design , development, and fabrication services to some of the world's most inspired… more
    Global Foundries (09/19/25)
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